| abstract |
A member (10) for a semiconductor manufacturing apparatus is provided with an electrostatic chuck (20) that is formed of AlN, a cooling plate (30) and a cooling plate-chuck bonding layer (40). The cooling plate (30) is provided with: first to third substrates (31-33), a first metal bonding layer (34) that is formed between the first and second substrates (31, 32), a second metal bonding layer (35) that is formed between the second and third substrates (32, 33), and a coolant passage (36). The first to third substrates (31-33) are formed of a dense composite material that contains SiC, Ti 3 SiC 2 and TiC, said substances being listed in descending order of content. The metal bonding layers (34, 35) are formed by interposing an Al-Si-Mg bonding material between the first and second substrates (31, 32) and between the second and third substrates (32, 33) and bonding the substrates (31-33) by thermal compression. |