| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8ccc837566f72dc6f52c4511aab0b800 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28587
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0277
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28537
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate |
2014-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7933a53579a18fa8c95bef674078e991
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c03718ed86b8c4a3a7ce9e5768358f4b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba25ea339373e7342ea78734ddc25ca9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_191bb1d1a637aa09ccc79086b216a1c6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50a6b1e99e3953054811622c78828fcc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6187effc820343acfa5fbec0fcf595ae |
| publicationDate |
2014-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2014149662-A1 |
| titleOfInvention |
A method of forming a gate contact |
| abstract |
A method is provided for forming a gate contact for a compound semiconductor device. The gate contact is formed from a gate contact portion and a top or wing contact portion. The method allows for the tunablity of the size of the wing contact portion, while retaining the size of the gate contact portion based on a desired operational frequency. This is accomplished by providing for one or more additional conductive material processes on the wing contact portion to increase the cross-sectional area of the wing contact portion reducing the gate resistance, while maintaing the length of the gate contact portion to maintain the operating frequency of the device. |
| priorityDate |
2013-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |