| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31b1220216408a6076f55e0ba4ec1003 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate |
2014-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4cb90c7b8de95b091c887f37a05fa60c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_062196b62706c249a65ce7767f6000e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_72a248d19c957f30b521f20f0747ed8f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_598e5b168944c18c88ac843f9ce7ab47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02259d1af6402c8f233bf1628a9ab747 |
| publicationDate |
2014-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2014140370-A1 |
| titleOfInvention |
Semiconductor light emitting structure having active region comprising ingan and method of its fabrication |
| abstract |
A semiconductor structure includes an active region between a plurality of layers of InGaN. The active region is substantially comprised by InGaN. The plurality of layers of InGaN include at least one well layer comprising ln w Ga 1-w N, and at least one barrier layer comprising In b Ga 1-b N proximate the at least one well layer. In some embodiments, the value of w in the ln w Ga 1-w N of the well layer may be greater than or equal to about 0.10 and less than or equal to about 0.40 in some embodiments, and the value of b in the In b Ga 1- n b N of the at least one barrier layer may be greater than or equal to about 0.01 and less than or equal to about 0.10. Methods of forming semiconductor structures include growing such layers of InGaN to form an active region of a light emitting device, such as an LED. Luminary devices include such LEDs. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9978905-B2 |
| priorityDate |
2013-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |