http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014130668-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_366a0ce26461e9c0375d766b208de8ec http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b57a6e45a30d527c13cfa24a80cdcc11 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02277 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2014-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_253fb6106c0e4f4c96f744311c4e83e2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f8c7f72e9343204835338af4bbf3931 |
| publicationDate | 2014-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2014130668-A1 |
| titleOfInvention | Catalytic atomic layer deposition of films comprising sioc |
| abstract | Provided are methods of for deposition of SiOC. Certain methods involve exposing a substrate surface to a first and second precursor in the presence of a catalyst comprising a neutral two electron donor base. The first precursor has formula (X y H 3-y Si) z CH 4-z, or (X y H 3 _ y Si)(CH 2 ) n (SiX y H 3-y ), wherein X is a halogen, y has a value of between 1 and 3, and z has a value of between 1 and 3, and n has a value between 2 and 5. The second precursor comprises water or a compound containing carbon and at least two hydroxyl groups. Certain other methods relate to exposing a substrate surface to a first and second precursor in the presence of a catalyst comprising a neutral two electron donor base, the first precursor comprising SiX 4 or X 3 Si-SiX 3 , wherein X is a halide, and the second precursor comprising carbon and at least two hydroxyl groups. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11049807-B2 |
| priorityDate | 2013-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.