http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014130394-A1

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_82a9e22a923eca64a02a97f0dfb493ed
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66174
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0808
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-93
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-94
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filingDate 2014-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dae1772706bbc2aa5127e6ad5fddba46
publicationDate 2014-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2014130394-A1
titleOfInvention Three terminal semiconductor device with variable capacitance
abstract Methods and apparatus for implementing variable, e.g., tunable, 3 terminal capacitance devices are described. In various embodiments vertical control pillars spaced apart from one another extend in a well having an opposite polarity than the polarity of the control pillars. The control pillars are arranged in a line that extends parallel to but between a deep trench gate and a well pickup. By varying the voltage applied to the control pillars the size of the depletion zone around the pillars can be varied resulting in a change in capacitance between the trench gate and pickup terminal connected to the well pickup. The generally vertical nature of the control pillars facilities control over a wide range of voltages while allowing for manufacturing using common semiconductor manufacturing steps making the device easy to implement on a chip with other semiconductor devices.
priorityDate 2013-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 20.