http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014121123-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_971569ae4d5b1a8f0397cca507e7913b http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7255665f64e58eede4455aec5aaa3bf2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f4ceb7e093350e8f6134d21e7a9027b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate | 2014-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3551e12aab6dab1a1e79b7ce3a605d6f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a70a3c34576af609bff4578861856f74 |
| publicationDate | 2014-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2014121123-A1 |
| titleOfInvention | Method of manufacturing a magnetoresistive device |
| abstract | A method of manufacturing a magnetoresistive-based device includes etching a hard mask layer, the etching having a selectivity greater than 2:1 and preferably less than 5:1 of the hard mask layer to a photo resist thereover. Optionally, the photo resist is trimmed prior to the etch, and oxygen may be applied during or just subsequent to the trim of the photo resist to increase side shrinkage. An additional step includes an oxygen treatment during the etch to remove polymer from the structure and etch chamber. |
| priorityDate | 2013-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.