| abstract |
The purpose of the present invention is to reduce stand-by current and achieve high-speed operations in a semiconductor storage device of an SCRC type. The semiconductor storage device includes a first voltage supply line that transmits a first voltage, and a second voltage supply line that transmits a second voltage. Further, the semiconductor storage device has an electric path between the first voltage supply line and the second voltage supply line, and includes a switch circuit that causes, with a first voltage level of a control gate, a part between the first voltage supply line and the second voltage supply line to assume a conductive state, and with a second voltage level of the control gate, causes the part between the first voltage supply line and the second voltage supply line to assume a non-conductive state. Further, the semiconductor storage device includes a compensation capacitor circuit that is connected to the second voltage supply line. Here, the compensation capacitor circuit and the switch circuit are adjacent to each other, and share a first diffusion layer of a first conductivity type. |