| abstract |
Disclosed is a method for preparing an in situ Pt-doped NiO ordered nanowire array, comprising: growing a Ni layer on a high temperature-resistant insulating substrate; coating a photoresist layer onto the Ni layer, carving an ordered nanowire array pattern area on the photoresist layer by utilizing electron-beam lithography, growing Ni in the ordered nanowire array pattern area, removing the photoresist by employing acetone then etching the surface of the Ni layer by utilizing an ion-beam etching process, etching off the Ni layer grown on the surface of the substrate, leaving only the Ni in the ordered nanowire array pattern area to form an ordered Ni nanowire array; submerging the ordered Ni nanowire array into an H 2 PtCl 6 solution, using a displacement reaction to have Pt displaced on the Ni nanowire array; oxidizing in an oxidation furnace the Ni nanowire array having attached thereto the Pt, and acquiring the Pt-doped ordered NiO nanowire array. The present invention is simple and practical, and provides a doped sensor with greatly improved sensitivity and stability to gases such as CO and H 2 . |