| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33cf281df1fdf76b7da1bb88a75ba80d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-036
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2013-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77ad9d4534b08236d0ea09487f2574f3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9337a4c4345d3cfa44be31c05495af2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f066a34c2faf7d4330a7434a80d9350 |
| publicationDate |
2014-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2014104708-A1 |
| titleOfInvention |
Thin-film transistor, method of manufacturing the same, and display device including the thin-film transistor |
| abstract |
A thin film transistor, a method of manufacturing the thin film transistor, and a display device including the thin film transistor are provided. The thin film transistor comprises a gate electrode formed on the oxide semiconductor layer such that a first surface of the oxide semiconductor layer faces the gate electrode. A source electrode and a drain electrode are electrically connected to the oxide semiconductor layer, respectively. The oxide semiconductor layer, gate electrode, source electrode and drain electrode are arranged in a coplanar transistor configuration. A light-blocking element is also arranged to shield a second surface of the oxide semiconductor layer from external light. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I666767-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11183546-B2 |
| priorityDate |
2012-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |