http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014102625-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f319e2d2a3d835dbdb890f3781ae574 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-486 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-371 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-623 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-622 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-626 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-655 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-6574 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-6572 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 |
| filingDate | 2013-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f7fe623f2de31d75784b7b284405698 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e30546643c281f18ce11c49b827e65a |
| publicationDate | 2014-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2014102625-A1 |
| titleOfInvention | Thin film transistor with a current-induced channel |
| abstract | A thin film transistor (TFT) includes a hole transport layer having a first side and a second side and an electron transport layer having a first side and a second side. The first side of the electron transport layer is directly interfaced to the second side of the hole transport layer. The electron transport layer includes a material having greater ionization potential and greater electron affinity than the hole transport layer, thereby forming a hole barrier and an electron barrier at the junction between the electron transport layer and the hole transport layer. A channel in the TFT is created by current injected into the electron transport layer from a gate electrode rather than by an electrostatic field generated by voltage applied to the gate electrode. The accumulated charge density in the channel of the TFT can be significantly larger than what can be generated through field effect principle, therefore a much lower gate voltage is needed than in a conventional TFT. |
| priorityDate | 2012-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 58.