| abstract |
The invention relates to a process for fabricating nanolithography masks from a film (20) of PS-b-PMMA block copolymer deposited on a surface (10) to be etched, said copolymer film comprising PMMA nanodomains (21) oriented perpendicularly to the surface to be etched, said process being characterised in that it comprises the following steps: irradiating (E1) part of said copolymer film in order to form a first irradiated zone and a second non-irradiated zone in said copolymer film, then treating (E2) said copolymer film in a developer solvent in order to remove, selectively, at least said PMMA nanodomains of said first irradiated zone of said copolymer film. |