http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014091868-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c97f90ab12b35b650d5fd039ed7a41a5 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2101-80 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-844 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 |
| filingDate | 2013-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca32c70bb0cd96454b551bde0216082a |
| publicationDate | 2014-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2014091868-A1 |
| titleOfInvention | Method of producing organic electroluminescence element |
| abstract | The purpose of the present invention is to provide a method of producing an organic EL element that has excellent cost-effectiveness, dark spot resistance, luminous efficiency (emission brightness) and light emission life. This method of producing an organic electroluminescence element is characterized in having a gas barrier layer and an organic layer unit, wherein the gas barrier layer contains carbon, silicon and oxygen, the composition changes continuously in the layer thickness direction, the carbon distribution curve has extreme values, the difference between the maximum and minimum extreme values of the carbon atom ratio is 5at% or greater and silicon is the second highest component amount in a region making up 90% or more of the total thickness; when forming the organic layers, after forming the organic layer that contains the solvent with the highest boiling point, in the interval until the negative electrode is formed, either heat treatment is performed collectively at no lower than 10°C less than the boiling point of the solvent with the highest boiling point used in formation of the organic layers and at no higher than 20°C more than the glass transition temperature of the film substrate, or, for the formation of each organic layer, heat treatment is performed sequentially at no lower than 10°C less than the boiling point of the solvent of the organic layer and no higher than 20°C more than the glass transition temperature of the film material. |
| priorityDate | 2012-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 186.