| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B31-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2013-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5ad9f841ec66d4038ebbf04ba584a42 |
| publicationDate |
2014-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2014069859-A1 |
| titleOfInvention |
Epitaxial wafer and method for manufacturing same |
| abstract |
Provided is a method for manufacturing an epitaxial wafer, and the method comprises: a preliminarily growing step of growing an epitaxial layer up to a designated first thickness by a designated first growth speed at a designated first growth temperature by injecting a reaction source for epitaxial growth on a semiconductor wafer arranged within a chamber; a heat treatment step of performing heat treatment for the preliminarily grown epitaxial layer for a predetermined time; and a subsequent growing step of growing the epitaxial layer up to a target thickness by a designated second growth speed at a designated second growth temperature by injecting the reaction source on the thermally treated semiconductor wafer, wherein the first growth speed is slower than the second growth speed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9899489-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170108912-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101889662-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114566571-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10700176-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10483367-B2 |
| priorityDate |
2012-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |