| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c98babf0d86f960b139cdb7401f3420f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19043
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-30107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1421
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-10 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01Q1-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 |
| filingDate |
2013-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25c0d4e724530758e7a2e09d4f0acf19
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25f5671ccd7cc6cedd925e352aea88eb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66ba40ca6bf296cbf2ce15710907d051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0972197f47ba2ee6a346313a07051e06 |
| publicationDate |
2014-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2014068593-A1 |
| titleOfInvention |
High-frequency integrated device with an enhanced inductance and a process thereof |
| abstract |
The present invention provides a high-frequency integrated device (100), comprising a substrate (101) including at least an on-chip active and passive member (102) and a ferrite layer (104) bonded to the substrate through an interfaciai bridge (103) and substantially wrapping plurality of surfaces of said at least on-chip active and passive members. The present invention also provides a system incorporating the high-frequency integrated device of the present Invention. The present invention further provides a process for the preparation of the high-frequency integrated device. |
| priorityDate |
2012-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |