| abstract |
Provided is an oxide semiconductor capable of inhibiting excessive intrinsic carriers and having high electrical stability. The oxide semiconductor comprises: an Al x In y Zn z oxide and a trace amount of dopants; and the trace amount of dopants comprises: a combination of any one or more of rare earth elements, oxides of rare earth elements, Group 4B elements, oxides of Group 4B elements, Group 5B elements or oxides of Group 5B elements. |