abstract |
[Problem] To provide a composition for forming a resist upper layer film, which is used in a lithography process in the production procedure of a semiconductor device and selectively transmits only EUV by blocking undesirable exposure light such as UV and DUV during EUV exposure without being intermixed with a resist, and which can be developed with a developer liquid after the exposure.n[Solution] Provided is a composition for forming a resist upper layer film, which contains a solvent and a novolac polymer that contains a hydroxy group and has a structure represented by formula (1-1).n(In formula (1-1), Ar 1 represents an organic group which contains 1-3 benzene rings and may contain a hydroxy group; Ar 2 represents a benzene ring, a naphthalene ring or an anthracene ring; and the hydroxy group and R 1 are substituents of hydrogen atoms of Ar 2 .) |