http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014030616-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d97cb748898aa080b013f7f35bc8b434 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b70ed3cce04b118dca1bcda8654985c1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7a33f4d897c10b9cc21655d02e513d5b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25B15-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D11-0064 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B3-102 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D11-0047 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25B1-29 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D3-3947 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25F1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B3-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23G1-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B3-08 |
| filingDate | 2013-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27bc05e208ddc7c02fc566e1896eb673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c315af56bf6aaec1c2e0b0987c8d1b24 |
| publicationDate | 2014-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2014030616-A1 |
| titleOfInvention | Cleaning method and cleaning system for semiconductor substrates |
| abstract | [Problem] To enable efficient cleaning of a semiconductor substrate (100), which has been subjected to a silicidizing process and from which TiN is at least partially exposed, without causing damage to TiN or a silicide layer.n[Solution] When a semiconductor substrate, which has been subjected to a silicidizing process and from which TiN is at least partially exposed, is cleaned, the cleaning process comprises: a persulfuric acid production step wherein a sulfuric acid solution for cleaning is circulated and caused to pass through an electrolysis unit (2), so that a persulfuric acid having a predetermined concentration is produced by electrolysis at the electrolysis unit (2); a solution mixing step wherein a sulfuric acid solution containing the persulfuric acid obtained in the persulfuric acid production step and a halide solution containing one or more kinds of halide ions are mixed with each other without being passed through the electrolysis unit (2), so that a mixed solution containing persulfuric acid and having an oxidant concentration of 0.001-2 mol/L is produced after the mixing; a heating step wherein the mixed solution is heated; and a cleaning step wherein the heated mixed solution is transferred and brought into contact with a semiconductor substrate (100) for cleaning the semiconductor substrate (100). |
| priorityDate | 2012-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.