| abstract |
An alkyltelluroether precursor for use in the single source chemical vapour deposition of a metal telluride, which alkyltelluroether precursor comprises an alkyltelluroether ligand bonded to a metal halide, which alkyltelluroether precursor comprises at least one alkyl group containing at least two carbon atoms, and which alkyltelluroether precursor has the general formula: MX n (alkyltelluroether)y where M = metal X = a halide n = 3 or 4, and y = 1, 2 or 3 alkyl = butyl, propyl, ethyl, trimethylsilyl, cyclohexyl, cyclopentyl or benzyl. |