http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014010457-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1d29f7ac2c7f9be9f7dae1a83bbb5c92 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P20-10 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F22B1-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-03 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-03 |
| filingDate | 2013-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_290f24e75d2c439b6d0093a36852e535 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d1abeb439133bf500e78971b9c53f27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1278fc99cef729e52f1bd48448db9e47 |
| publicationDate | 2014-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2014010457-A1 |
| titleOfInvention | Method for producing polysilicon |
| abstract | [Problem] The purpose of the invention is to recover heat efficiently from high-temperature exhaust gas generated from a polysilicon deposition step. The purpose of the invention is also to improve the production efficiency by reducing the adhesion and residues of silicon fine powder and polymer in the pipes and equipment, improving the efficiency of the recovery of unreacted raw material gas and the like, lowering the washing frequency, and making possible long-term, continuous operation. [Solution] This method for producing polysilicon comprises: a deposition step for depositing polysilicon using raw material gas containing chlorosilanes; and a heat-recovery step for feeding exhaust gas from the deposition step to a boiler-type heat recovery device provided with an exhaust gas pipe, and recovering the heat; and is characterized in that the outlet gas temperature of the exhaust gas pipe in the boiler-type heat recovery device is set at 200°C or higher and the exhaust gas flow rate at the exhaust gas pipe outlet in the boiler-type heat recovery device is adjusted to 10 m/sec or higher. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2018230380-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7023951-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018230380-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11512001-B2 |
| priorityDate | 2012-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.