| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_99505f5f312672820e9f78c254c00a4d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02327
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-109 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0232 |
| filingDate |
2013-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b8b0ca9e7a85f1423dc307ecc0ea0ee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0d3403e78e80f0acca65ded6f137f8a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d76a5dee5dae0cae9f079c929ed76a4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f514f696b4cafb07b4e67dd92e49da9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb05f7aaab465e58f79a1731e2179866 |
| publicationDate |
2013-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2013189997-A1 |
| titleOfInvention |
Semiconductor structure comprising an absorbing area placed in a focusing cavity |
| abstract |
The invention relates to a semiconductor structure (10) intended to receive an electromagnetic radiation (2), comprising: a first semiconductor area having a first type of conductivity (121), a second semiconductor area (122) having a second type of conductivity that is the opposite of the first type of conductivity, the second area being in contact with the first area such as to form a semiconductor junction. The second area has a portion having the concentration of majority carriers that is at least ten times lower than the concentration of majority carriers of the first area. The second area and the portion thereof are essentially provided in a first cavity (130) suitable for focusing at least part of the electromagnetic radiation in the first cavity. The invention further relates to a method for manufacturing such a structure and a semiconductor component. |
| priorityDate |
2012-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |