| abstract |
A plasma etcher device (1) and corresponding method for decapsulating (i.e. removal of encapsulation or package of) an electronic or semiconductor sample (46), by means of microwave resonance induced plasma jet (44) based etching. The plasma jet is generated in a microwave resonance cavity (6) and ejected towards the sample (46). The proposed device and method employ a liquid masking layer (58) on top of the sample (46), to confine the plasma jet (44) and improve the etching accuracy. |