http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013178425-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9884b2360f2413d7edea0d5af39f775a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate | 2013-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02abcabdd31efc70785308ef5d6ddd0d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e3bdb7235c14035ee571cac0e23262b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f792813e8af0599a1322ad0391ae890 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d42edfa0dc8c07f6fe24da011ac825b4 |
| publicationDate | 2013-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2013178425-A1 |
| titleOfInvention | Method for producing an active zone for an optoelectronic semiconductor chip, and optoelectronic semiconductor chip |
| abstract | In at least one embodiment, the method is designed to produce an active zone for an optoelectronic semiconductor chip, and comprises the steps: growing a fourth barrier layer (24) based on Al x4 In y4 Ga 1-x4-y4 N where 0≤ x4 ≤ 0.40 and on average 0 < y4 ≤ 0.4, wherein an In content increases along a growth direction (z); growing a quantum well layer (20) on the fourth barrier layer (24), wherein the quantum well layer (20) is based on InyGa1-yN where 0.08 ≤ y ≤ 0.35; growing a first barrier layer (21) based on Al x1 In y1 Ga 1-x1-y1 N, where 0 ≤ x1 ≤ 0.40 and on average 0 < y1 ≤ 0.4, on the quantum well layer (20), wherein the In content decreases along the growth direction (z); growing a second barrier layer (22) based on GaN on the first barrier layer (21); and growing a third barrier layer (23) based on GaN on the second barrier layer (22), wherein the third barrier layer (23) is grown with the addition of H2 Gas. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I612686-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9887317-B2 |
| priorityDate | 2012-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.