http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013176484-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8d0fc2b70675ee19bd5fc464f5ae9061 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-387 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42 |
| filingDate | 2013-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa886c69a8ad32825c574c9a4adc1f4e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5aff8b8a07d3c3d6c58879ccf9785d77 |
| publicationDate | 2013-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2013176484-A1 |
| titleOfInvention | Transparent electrode and method for forming transparent electrode |
| abstract | A transparent electrode and a method for forming the transparent electrode are disclosed. One preferred embodiment of the present invention provides a transparent electrode having good ohmic characteristics with a semiconductor layer and excellent light transmittance including ultraviolet regions by forming, as a pattern, first electrodes having high conductivity and an ohmic contact with a semiconductor layer on which the transparent electrode is to be formed and by filling the spaces between the first electrodes formed as a pattern with second electrodes. Additionally, a transparent electrode, according to another embodiment of the present invention, can further exhibit good current spreading effects as well as good ohmic characteristics and excellent light transmittance by forming, as a thin film, a current spreading layer, which is formed from a carbon nanotube (CNT), graphene or the like having excellent conductivity and transmissivity, on the semiconductor layer and by forming the first and second electrodes described above on the current spreading layer. |
| priorityDate | 2012-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.