| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12d24c0a12c3ecdb6d9a47d623d96e76 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0661
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0615
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0638 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7396
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0646
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0619
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7395 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2013-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_12867f4d191d4fe6a62ca1130635ea38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2bd99786077a04e3f74c0558871b9ab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d0300fc34d11fed86987c27c40d05d4 |
| publicationDate |
2013-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2013172059-A1 |
| titleOfInvention |
Semiconductor device |
| abstract |
This SiC reverse blocking MOSFET (1004) is provided with: an active region (40) containing a MOS gate structure at the obverse surface side of an SiC n- type drift layer (1) grown at one primary surface of a p+ type SiC substrate (100); and a voltage-resistant structure section (30) that encircles the outer periphery of the active region (40). At the lateral surface of the SiC n- type drift layer (1), a p-type separation region (26) is provided that encircles the outer periphery of the voltage-resistant structure section (30) and extends from the front lateral surface of the SiC n- type drift layer (1) to the p+ type SiC substrate (100). At the region of the other primary surface of the p+ type SiC substrate (100) opposite the active region (40), a concavity (101) is provided that has a bottom surface area corresponding to the surface area of the active region (40) and that penetrates the p+ type SiC substrate (100) extending to the SiC n- type drift layer (1). At the inner wall of the concavity (101), a metal film (12) is provided that contacts the SiC n- type drift layer (1) at the floor of the concavity (101) and forms a Schottky connection. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108417625-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018034250-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7048497-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019165245-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015230849-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107210318-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016046288-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10923562-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3226305-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2018034250-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016042330-A1 |
| priorityDate |
2012-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |