| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N23-207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B35-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B13-34 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N23-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-02 |
| filingDate |
2013-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2058b7ce461b28a7642a92db8c8a8e41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed27b573a47995dbd8248482bf19e285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d298ee43ac9882edcf46f0df085b648a |
| publicationDate |
2013-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2013150758-A1 |
| titleOfInvention |
Method for evaluating degree of crystal orientation in polycrystalline silicon, selection method for polycrystalline silicon rods, and production method for single-crystal silicon |
| abstract |
Peaks sometimes appear in a φ scan chart when an evaluation is performed on a disc-shaped sample (20) obtained from a polycrystalline silicon rod. The fewer the number of such peaks and the narrower the half width thereof, the more suitable the sample is for use as a raw material for single-crystal silicon production. It is preferable for the number of peaks appearing in a φ scan chart to be no more than 24/cm 2 when converted to a number of peaks per unit surface area of the disc-shaped sample, for both Miller index <111> and <220> planes. It is also preferable to select as the raw material for single-crystal silicon production a material having all heterogeneic crystal particle diameters being less than 0.5 mm, when the heterogeneic crystal particle diameter is defined as the value obtained by multiplying the peak half width by δL=2 1/2 πR o /360, when the radius of the disc-shaped sample is R o . |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016103608-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016121052-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9274069-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11167994-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10800659-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2863212-A4 |
| priorityDate |
2012-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |