http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013139325-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a57e91623b977c8affaf41f27df789db |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2619 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01K7-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2013-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec43d450eb6caffe68f2c61c8eda0114 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8de6a231a890d920043e37560acbfebb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be7689e110cae44fdbe6ce1fee25f338 |
| publicationDate | 2013-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2013139325-A1 |
| titleOfInvention | Method and device for determining the temperature calibration characteristic curve of a semiconductor component appertaining to power electronics |
| abstract | The invention relates to methods and devices for determining the temperature calibration characteristic curve of a semiconductor component (3) appertaining to power electronics. They are distinguished, in particular, by the fact that the temperature calibration characteristic curve can be determined in a simple and economically advantageous manner. For this purpose, the power connections of the semiconductor component (3) are interconnected - with a first current source (1) for a load current, - with a second current source (2) for a measurement current - with a voltmeter (v) for measuring the voltage dropped across either the power connections or auxiliary connections connected to the power connections. Furthermore, the semiconductor component (3) connected to a data processing system is - heated by means of the power loss thereof at intervals with the first current source (1) switched on and - the voltage dropped across the power or auxiliary connections with the first current source (1) switched off and the second current source (2) switched on is measured between the intervals after a time duration determined by the thermal main time constant of the semiconductor component (3) as values representing the temperature including the associated temperatures. Following an approximation the values form the calibration characteristic curve of the semiconductor component (3). |
| priorityDate | 2012-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.