| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7928da31edd198a7dc9fbeedb0022d25
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_69108fc12b940ede105638f37f06080b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_591126160db2127267b8ad02ed40cac0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f1a6844e327eb12dd4bdbc674340b47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a2d4ec8aeb50a0792fb55973182b4415 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-074
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022491 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-00 |
| filingDate |
2013-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97802fdab33edca426c6aa4cf3a5c729
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09672eee49886509718e12426e5fc42a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d2a61ca00b08de85d2df4a5685ba6cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7d7e909cae4526648e9a8e325e21551 |
| publicationDate |
2013-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2013138635-A1 |
| titleOfInvention |
Hole-blocking silicon/titanium-oxide heterojunction for silicon photovoltaics |
| abstract |
A hole-blocking silicon/titanium- oxide heterojunction for silicon photovoltaic devices and methods of forming are disclosed. The electronic device includes at least two electrodes having a current path between the two electrodes. The electronic device also includes a heterojunction formed of a titanium-oxide layer deposited over a Si layer and being disposed in the current path. The heterojunction is configured to function as a hole blocker. The first electrode may be electrically coupled to the Si layer and a second electrode may be electrically coupled to the titanium- oxide layer. The device may also include a PN junction disposed in the Si layer, in the current path. The device may also include an electron-blocking heterojunction on silicon in the current path. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106887335-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017139505-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106887335-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101920127-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10566144-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/AT-519193-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2015049841-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10109429-B2 |
| priorityDate |
2012-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |