| abstract |
The embodiments of the present invention relate to the technical field of photonics technology and disclose a semiconductor light-emitting diode (LED) and method for manufacturing same. The semiconductor LED comprises an n-GaN layer, a quantum well layer, an electron blocking layer and a p-GaN layer，which are sequentially stacked on a substrate. The electron blocking layer comprises at least a first AlGaN layer and at least a second AlGaN layer, wherein the first AlGaN layer and the second AlGaN layer are alternately stacked, the first AlGaN layer and the second AlGaN layer have different Al component. The method comprises the steps of: sequentially growing an n-GaN layer, a quantum well layer, an electron blocking layer and a p-GaN layer on a substrate. The embodiments of present invention design and optimize the changes of the Al component in the electron blocking layer by bandgap engineering, then the overflow of the electrons can be blocked, while hole injection efficiency can be improved, thereby the quantum efficiency of the LED is improved. |