http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013129466-A1

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filingDate 2013-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7bcab0fb8026ed21e72410a5bd1b8613
publicationDate 2013-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2013129466-A1
titleOfInvention Complex compound, raw material for forming semiconductor layer, method for manufacturing semiconductor layer, and method for manufacturing photoelectric converting device
abstract The purpose of the present invention is to manufacture a semiconductor layer containing a Group I-II-IV-VI compound, using a simple method. The complex compound for manufacturing the semiconductor layer is expressed by structural formula (1). (In the formula, M 1 represents a Group I-B element. M 2 represents a Group IV-B element. R 1 through R 3 each independently represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted cycloalkyl group, or substituted or unsubstituted heterocyclic group. Herein, 2 or more of R 1 through R 3 can be coupled to form a saturated or unsaturated ring. X 1 through X 3 each independently represent a chalcogen element. L 1 and L 2 each independently represent a ligand. Herein, L 1 and L 2 can be coupled to form a saturated or unsaturated ring.)
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015202979-A
priorityDate 2012-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 29.