| abstract |
The present invention provides a method for producing silicon epitaxial wafers, whereby resistivity is set to 1.0 to 1.7 mΩcm by arsenic doping, and a silicon epitaxial layer is formed on an n-type silicon single crystal wafer manufactured after being doped with carbon or nitrogen, or carbon and nitrogen. This method for producing silicon epitaxial wafers, which enables occurrences of stacking defects to be minimizes when causing epitaxial growth on an arsenic-doped ultra-low resistance silicon single crystal wafer, can thus be provided. |