| abstract |
This thin film semiconductor device (100) has two thin film transistors (100a and 100b), and each of the two thin film transistors (100a and 100b) is provided with gate electrode (111a and 111b), a gate insulation layer (112), a semiconductor film (113a and 113b), a channel protective layer (115a and 115b), an intrinsic semiconductor layer (114a and 114b), a contact layer (116a and 116b, 117b and 117c) formed contacting a portion of the lateral surface of the channel region, a source electrode (120a and 120c) formed on the contact layer (116a and 117b), and a drain electrode (120b and 120d) formed on the contact layer (116b and 117c) and opposite of the source electrode, wherein the conductivity types of the one contact layer (116a and 116b) and the other contact layer (117b and 117c) have mutually opposite polarity. |