http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013115032-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2baf849d216e689ecc40ccc931a7a7bc |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-80 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0755 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 |
| filingDate | 2013-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6dedb2bfd6b34c51908678e6ad554b2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d59fc16c05232a51ae619b9c701f003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c29c6f143f3656c8d7985d809448bc1a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b017ab90ebb5e3f9c0d200a1fb4322f |
| publicationDate | 2013-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2013115032-A1 |
| titleOfInvention | Semiconductor device manufacturing method using silicon-containing resist underlayer film forming composition for solvent development |
| abstract | [Problem] To provide a resist underlayer film which is good for the formation of a resist pattern by developing a resist with use of an organic solvent after exposure of the resist. [Solution] A semiconductor device manufacturing method which comprises: a step (A) wherein a resist underlayer film forming composition is applied onto a substrate and fired thereon, thereby forming a resist underlayer film; a step (B) wherein a composition for resists is applied onto the underlayer film, thereby forming a resist film; a step (C) wherein the resist film is exposed; a step (D) wherein the resist film is developed with use of an organic solvent after the exposure, thereby obtaining a patterned resist film; and a step (E) wherein the resist underlayer film is etched using the patterned resist film, and the substrate is processed using the patterned resist underlayer film. In this connection, the resist underlayer film forming composition contains a hydrolyzable silane, a hydrolysis product thereof, a hydrolysis-condensation product thereof or a combination of a hydrolyzable silane, a hydrolysis product thereof and a hydrolysis-condensation product thereof; and the hydrolyzable silane is composed of a silane represented by formula (1), a silane represented by formula (2) and a silane represented by formula (3). The resist underlayer forming composition contains the silane represented by formula (1), the silane represented by formula (2) and the silane represented by formula (3) at a ratio by mol% of 45-90:6-20:0-35 in total silanes. Si(R 1 ) 4 formula (1) R 2 [Si(R 3 ) 3 ] a formula (2) R 4 [Si(R 5 ) 3 ] b formula (3) |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017063179-A |
| priorityDate | 2012-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 617.