| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3050df439e34d99026b3e6dec7ff01f8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ad2b3d324e5e342d2705e6ce74b31e86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_26dfb6c26ca74eba10999ad84ebdc24e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6fa713fa49ad2031868cc902cc562190 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6719
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-4827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-772
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-22 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2013-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77bb278fd1422ec137061a6be1821c70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ae2d0fef2a8afdb1c2cc5926ed9025e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d38ad7a92592a9aec8a3656747faa7a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f373d69956385eeb53e7bbe99a9ffd45 |
| publicationDate |
2013-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2013112702-A1 |
| titleOfInvention |
Devices including metal-silicon contacts using indium arsenide films and apparatus and methods |
| abstract |
Described are apparatus and methods for forming films comprise indium and arsenic. In particular, these films may be formed in a configuration of two or more chambers under "load lock" conditions. These films may include additional components as dopants, such as aluminum and/or gallium. Such films can be used in metal/silicon contacts having low contact resistances. Also disclosed are devices including the films comprising indium arsenide. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021067525-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11450759-B2 |
| priorityDate |
2012-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |