| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_947510160e812a4d855e3e7c27625f56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bd6643d0a7ac34d0336f78f3eda18a4d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ca46be4e68fa1f5a8b2ef4ab654c490a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_956630597f8e19ddcfcfd75dd54a134f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a74b0514b692204f1917f1b757b4bf60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_76af06f5f1ca9a0fe10dbe452f321659 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B2204-04 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02661
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02614
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0281
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-184
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B31-04 |
| filingDate |
2012-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70e12c7341894c8dfd386fa9ab0f838a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91944c72f980b1e07d1e1ec4c98f5546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_056f0018782d6e4c416d072bcf748a68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_576c17746f83d3c86238b6aed4fbdd61
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_129631e23dbf425163545967b2417e09 |
| publicationDate |
2013-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2013102359-A1 |
| titleOfInvention |
Method for preparing graphene on sic substrate based on annealing with assistant metal film |
| abstract |
Provided are a method for preparing a graphene on SiC substrate based on annealing with assistant metal film and a double-layer graphene prepared thereby. The method comprises: normally cleaning the SiC substrate; introducing the cleaned SiC substrate into a quartz tube and heating it to 750-1150°C; inputting a CCl 4 steam in the quartz tube with Ar gas and reacting with SiC to form a double-layer carbon film, wherein the reaction time is 20-100min; forming a metal film of 350-600nm on the SiC substrate via electron beam deposition; disposing the double-layer carbon film on the metal film and putting them all in Ar gas, annealing at the temperature of 900-1100°C for 10-30min to reconstruct the double-layer carbon film to form double-layer graphene; taking out of the metal film from the double-layer graphene sample wafer and obtaining a double-layer graphene. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015132537-A1 |
| priorityDate |
2012-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |