| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_699b8758f305027e5df006eb78be8762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1937837beb7881ff030d40e49a7ce3d8 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6708
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2012-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8ef6d34a5c84b8cb5f860b24b0114aa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2592020e6988222a5d09eeb3baf9e082 |
| publicationDate |
2013-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2013101274-A1 |
| titleOfInvention |
Increasing masking layer etch rate and selectivity |
| abstract |
Provided is a method and system for increasing etch rate and etch selectivity of a masking layer on a substrate, wherein the system comprises a plurality of substrates containing the masking layer and a layer of silicon or silicon oxide, an etch processing chamber configured to process the plurality of substrates, the processing chamber containing a treatment liquid for etching the masking layer, and a boiling apparatus coupled to the processing chamber and configured to generate a supply of steam water vapor mixture at elevated pressure, wherein the steam water vapor mixture is introduced into the processing chamber at a controlled rate to maintain a selected target etch rate and a target etch selectivity ratio of the masking layer to silicon or silicon oxide. |
| priorityDate |
2011-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |