| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1469bed1ced71e72e0299331c9cbf75c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ca086e4ce55f2c1f94a3828818d5f7cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_29c8490843b2973c9981b37d1f1f885c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-90
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-31 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate |
2011-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc8b609b45b32b9bc11f3d1190e84ad1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1f2e350677063bc8754662fdde71885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd1133630d4a1d1e4d4e4fce73056c49 |
| publicationDate |
2013-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2013089711-A1 |
| titleOfInvention |
Metal-insulator-metal (mim) capacitor with insulator stack having a plurality of metal oxide layers |
| abstract |
Metal-insulator-metal (MIM) capacitors with insulator stacks having a plurality of metal oxide layers are described. For example, a MIM capacitor for a semiconductor device includes a trench disposed in a dielectric layer disposed above a substrate. A first metal plate is disposed along the bottom and sidewalls of the trench. An insulator stack is disposed above and conformal with the first metal plate. The insulator stack includes a first metal oxide layer having a first dielectric constant and a second metal oxide layer having a second dielectric constant. The first dielectric constant is higher than the second dielectric constant. The MIM capacitor also includes a second metal plate disposed above and conformal with the insulator stack. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023163749-A1 |
| priorityDate |
2011-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |