| abstract |
To manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor. An oxide semiconductor film is deposited by a sputtering method with the use of a polycrystalline sputtering target. In that case, partial pressure of water in a deposition chamber before or in the deposition is set to be lower than or equal to 10 -3 Pa, preferably lower than or equal to 10 -4 Pa, more preferably lower than or equal to 10 -5 Pa. Thus, a dense oxide semiconductor film is obtained. The density of the oxide semiconductor film is higher than 6.0 g/cm 3 and lower than 6.375 g/cm 3 . |