http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013081767-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a62c92e56568bd104089aac22ca487b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7809 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2012-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f4dc1e09982ef251d1e83a01607969c5 |
| publicationDate | 2013-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2013081767-A1 |
| titleOfInvention | Method of forming self -aligned contacts and local interconnects |
| abstract | A semiconductor device fabrication process includes forming insulating mandrels over replacement metal gates on a semiconductor substrate with first gates (104) having sources and drains and at least one second gate (104') being isolated from the first gates. Mandrel spacers (124) are formed around each insulating mandrel. The mandrels and mandrel spacers include a first insulating material. A second insulating layer (126) of a second insulating material is formed over the transistor. One or more first trenches are formed to the sources and drains of the first gates by removing the second insulating material between the insulating mandrels. A second trench is formed to the second gate by removing portions of the first and second insulating materials above the second gate. The first trenches and the second trench are filled with conductive material to form first contacts (132) to the sources and drains of the first gates and a second contact (142) to the second gate. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170131186-A |
| priorityDate | 2011-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.