http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013081483-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d75672b058b5ae5cbc470d6b07a0313b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N33-24 |
| filingDate | 2012-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_461a493e35b8c70d13042faed0360d98 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5c8c761b61668eb33d8590471aacdcf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25856f5e1253f27ea8f1f3c7db221057 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42f1f99e5db31f6be9707fdb7c40b418 |
| publicationDate | 2013-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2013081483-A2 |
| titleOfInvention | Apparatus for determining the reducibility of iron ores |
| abstract | The method for forming palladium silicide nanowires consists in the st stage, which involves physical vapor deposition of fullerene (C 60 ) and palladium acetate - precursors of the initial layer, in depositing a composite carbon-palladium film, containing Pd nanograins in the carbon matrix, onto a Si substrate. The following 2 nd stage consists in modifying the composite film by way of chemical vapour deposition, with xylene and temperature as modifying factors. The modification results in the formation of palladium silicide nanowires, subsequently isolated by annealing of the carbon matrix in the air, in limited areas on the Si substrate. The annealing temperature for the carbon matrix does not exceed 750 o C. The process of physical vapor deposition takes place under dynamic vacuum of at least ~10 - Torr and the Si substrate temperature of up to 1 o C, with two separated sources of fullerene (C 60 ) and palladium acetate (PdC 4 H 6 O 4 ) -precursors of the initial layer. The process of chemical vapour deposition takes place under atmospheric pressure and in the flow of argon as a carrier gas for xylene vapours, with the temperature of the modification process of up to 700 o C and duration of up to 60 minutes. (4 claims) |
| priorityDate | 2011-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.