http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013066466-A2

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filingDate 2012-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_868cfcabdcd134dbc8bdf58246bbd237
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publicationDate 2013-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2013066466-A2
titleOfInvention Low voltage high efficiency gallium arsenide power amplifier
abstract A low voltage, switch mode PHEMT power amplifier with a 0.1 μm gate length and a low loss, lumped element, output matching circuit is disclosed that provides high performance over a frequency range of 1.4 GHz - 2.5 GHz. The amplifier makes use of monolithic circuit technology for the first stage and output transistor, and uses a printed circuit board with surface mount components for the output matching network. The power output of the power amplifier is stable over a range of 60 degrees centigrade, has high power efficiencies of 44 - 53% with greater than 2 watts output power over the frequency range of 1.4 GHz and 2.5 GHz. In addition, through drain voltage control, the output power can be varied over a wide range between about 0.8 to 2.5 watts while still maintaining a high efficiency in the range of 50 ± 3%.
priorityDate 2011-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 22.