| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_54591fa290cc08898e289f174b69bc49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dd51743f01206c09ba3ac11b69c2247c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eecde1a404f2621d62b1968f6a32a38b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fb5aed3e4f55767bd6ac4ed71a938b5a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2908fde014738aa6fb034333c8e25418 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02351
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2012-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_270ae2b944a0437f915e053af29694e9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4e71bfe9794407c986dcd3897c38d70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd5796a46e79ede12dd21258ddca4485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d73ba0b3824f88617e569c613137ff8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9d56e610bac423cd8dd62c707188096 |
| publicationDate |
2013-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2013062756-A1 |
| titleOfInvention |
Treatments for decreasing etch rates after flowable deposition of silicon-carbon-and-nitrogen-containing layers |
| abstract |
Methods are described for forming and curing a flowable silicon-carbon-and-nitrogen-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon and carbon containing precursor while the nitrogen may come from a nitrogen-containing precursor that has been activated to speed the reaction of the nitrogen with the silicon-and-carbon-containing precursor at lower deposition chamber temperatures. The initially-flowable silicon-carbon-and-nitrogen-containing layer is treated to remove components which enabled the flowability, but are no longer needed after deposition. Removal of the components increases etch resistance in order to allow the gapfill silicon-carbon-and-nitrogen-containing layer to remain intact during subsequent processing. The treatments have been found to decrease the evolution of properties of the film upon exposure to atmosphere. |
| priorityDate |
2011-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |