| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a8e195fec1498a82cd9293bd542626db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f20f2122cda3708db6930b3fec4f6fc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4d1b11c755e8fea4a2eea21a75711751 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 |
| filingDate |
2012-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1e4d8c79387d1f76bc6944c6e916b10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d99224727f6cc2b7fab757102ce02a6 |
| publicationDate |
2013-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2013049416-A2 |
| titleOfInvention |
Light emitting regions for use with light emitting devices |
| abstract |
A light emitting device comprises a first layer having an n-type Group III-V semiconductor, a second layer adjacent to the first layer, the second layer comprising an active material that generates light upon the recombination of electrons and holes. The active material in some cases has one or more V-pits at a density between about 1 V-pit/μm 2 and 30 V-pit/μm 2 . The light emitting device includes a third layer adjacent to the second layer, the third layer comprising a p-type Group III-V semiconductor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10971649-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018128419-A1 |
| priorityDate |
2011-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |