http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013047104-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ec23156f36f87ea9b0ea3ff94e6f211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_061710fc32f0377971b952654861fc0f http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e02311e07eaf0def1b2088cbf98de49b http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_781c429e4e20536916ff74dcbe1b5417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_25ea2cff895d16fb56bc8c8eddf315c1 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25C3-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25C7-005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B9-228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3407 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22C28-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B59-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-165 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25C3-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22C28-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22B9-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 |
| filingDate | 2012-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46f517d9856f963958447f357e6c04eb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_64efde0e828628a11131c6b36451ebe2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be420ba41c2f6224e4de34fd7fcc0f17 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d292e6487fcb3d70d9ed987abb575483 |
| publicationDate | 2013-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2013047104-A1 |
| titleOfInvention | Process for producing high-purity lanthanum, high-purity lanthanum, sputtering target comprising high-purity lanthanum, and metal gate film comprising high-purity lanthanum as main component |
| abstract | High-purity lanthanum characterized in that the purity, in terms of the purity of the lanthanum excluding any rare-earth elements and any gas components, is 5 N or higher and the number of α-ray counts is 0.001 cph/cm 2 or less; and a process for producing high-purity lanthanum, characterized by electrolyzing crude lanthanum metal, as a raw material, that has a purity, in terms of the purity of the crude metal excluding any gas components, of 4 N or lower, in a molten salt having a bath temperature of 450-700ºC to obtain lanthanum crystals, subsequently desalting the lanthanum crystals, and then melting the desalted lanthanum with electron beams to remove volatile substances therefrom and thereby regulate the purity, in terms of the purity of the lanthanum excluding any rare-earth elements and any gas components, to 5 N or higher and the number of α-ray counts to 0.001 cph/cm 2 or less. The present invention addresses the problem of providing methods with which it is possible to efficiently and stably provide: high-purity lanthanum reduced in α rays; a sputtering target comprising the high-purity-material lanthanum; and a thin film for use as a metal gate, the thin film comprising the high-purity-material lanthanum as the main component. |
| priorityDate | 2011-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 60.