Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_11bf2ebc07bb164ac08f2872c2289d13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_087bed7abab91ae0f927879f9fe8b273 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ea1fb269de05a068447a0084bfef3092 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N33-18 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-44704 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N33-48721 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C12Q1-6869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y15-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N33-1826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-221 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C12Q1-68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C12M1-34 |
filingDate |
2012-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7c534786fa61569ff62d7dd6cfc3ec8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52d5be4096ac106c4e5268edd0acfc6e |
publicationDate |
2013-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2013043545-A1 |
titleOfInvention |
Using a field effect device for identifying translocating charge-tagged molecules in a nanopore sequencing device |
abstract |
A detector apparatus includes a field-effect transistor configured to undergo a change in amplitude of a source-to-drain current when at least a portion of a charge-tagged molecule translocates through the nanopore. In some implementations, the field-effect transistor is a carbon nanotube field effect transistor and the nanopore is located in a membrane. In other implementations, the field-effect transistor is a carbon nanotube field effect transistor and the nanopore is implemented in the form of a nano-channel in a semiconductor layer. |
priorityDate |
2011-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |