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filingDate 2012-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39e0a3e35a04a623b53af4d5d3159aac
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publicationDate 2013-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2013042423-A1
titleOfInvention Zn-Si-O SYSTEM OXIDE SINTERED BODY, METHOD FOR PRODUCING SAME, AND TRANSPARENT CONDUCTIVE FILM
abstract [Problem] To provide: a Zn-Si-O system oxide sintered body which suppresses abnormal electrical discharge and the like in cases where the Zn-Si-O system oxide sintered body is used for a sputtering target, or suppresses splash phenomenon in cases where the Zn-Si-O system oxide sintered body is used for a tablet for vapor deposition; and a method for producing the Zn-Si-O system oxide sintered body. [Solution] A Zn-Si-O system oxide sintered body which is mainly composed of zinc oxide, while containing Si, and which is characterized in that: Si is contained at an Si/(Zn + Si) atomic ratio of 0.1-10% by atom; the Si element is solid-solved in a wurtzite zinc oxide phase; and the sintered body does not contain spinel complex oxide phases that are an SiO 2 phase and zinc silicate (Zn 2 SiO 4 ). A method for producing the sintered body is characterized by comprising, during a process wherein a granulated powder obtained from starting material powders, namely a ZnO powder and an SiO 2 powder, is molded and the thus-obtained molded body is fired so as to produce the sintered body: a step wherein the molded body is heated at a heating rate of 5˚C/minute or more over the temperature range from 700˚C to 900˚C; and a step wherein the molded body is fired at 900-1,400˚C within a firing furnace.
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priorityDate 2011-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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