| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_66feb9ed21bc5ec626cc9302876b40eb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-471
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0388 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 |
| filingDate |
2012-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4926ff98e3e902eb9077f7be91a5d997 |
| publicationDate |
2013-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2013031820-A1 |
| titleOfInvention |
Organic thin film transistor insulating layer material |
| abstract |
The present invention relates to an organic thin film transistor insulating layer material with which an organic thin film transistor having a low hysteresis and threshold voltage may be manufactured. The organic thin film transistor insulating layer material of the present invention comprises (A) a high molecular compound which contains a benzyl thiocarbamate group (-Ph-CH 2 -SCSNR 2 ) in a molecule, and (B) an unsaturated double bond compound which contains at least two unsaturated double bonds in the molecule. |
| priorityDate |
2011-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |