| abstract |
This semiconductor wafer manufacturing method includes a carbon layer forming step, a through hole forming step, a feed layer forming step, and an epitaxial layer forming step. In the carbon layer forming step, a carbon layer (71) is formed on the surface of a substrate (70) composed of a polycrystalline SiC. In the through hole forming step, a through hole (71c) is formed in the carbon layer (71) formed on the substrate (70). In the feed layer forming step, a Si layer (72) and a 3C-SiC polycrystalline layer (73) are formed on the surface of the carbon layer (71). In the epitaxial layer forming step, by heating the substrate (70), a seed crystal composed of a 4H-SiC single crystal is formed on the surface of the substrate (70) exposed through the through hole (71c), and a 4H-SiC single crystal layer is formed by growing the seed crystal by proximity liquid phase epitaxial growing. |