| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ae06330d5271587596cefe49421f1a54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_891b87a7e4c3e9be87fbb77775291f45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_42a733121cb120d1fae36ecf5a9b2e70 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2301-176
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18313
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18369
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18352 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-028 |
| filingDate |
2012-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d5332ac2dd9dd92455e358195da7f81
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c33ceb8eb34500ba4d419fb95525f6f |
| publicationDate |
2013-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2013027041-A2 |
| titleOfInvention |
A semiconductor laser device and a method for manufacturing a semiconductor laser device |
| abstract |
A semiconductor laser device 100 formed on a semiconductor substrate 102, the device comprising : a passivation layer 118 arranged on an upper surface of the device structure for resisting moisture ingress, wherein the passivation layer comprises an inner layer 118a deposited on the upper surface of the device by atomic layer deposition and an outer layer 118b deposited on the inner layer, and comprising a material that is inert in the presence of water. |
| priorityDate |
2011-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |