http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013021721-A1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8213
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filingDate 2012-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c13a720b1e057e57d228e9334e0c812
publicationDate 2013-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2013021721-A1
titleOfInvention Silicon carbide semiconductor device
abstract First, second, fourth and fifth impurity regions (11, 12, 21, 22) have a first conductivity type, while a third impurity region (13) has a second conductivity type. The first to third impurity regions (11-13) reach a first layer (34) of the first conductivity type. The fourth and fifth impurity regions (21, 22) are provided on a second layer (35). First to fifth electrodes (S1, D1, G1, S2, D2) are respectively provided on the first to fifth impurity regions (11-13, 21, 22). The first and fifth electrodes (S1, D2) are electrically connected with each other, and the third and fourth electrodes (G1, S2) are electrically connected with each other. A sixth electrode (G2) is provided on a gate insulating film (I2) that covers the portion between the fourth and fifth impurity regions (21, 22).
priorityDate 2011-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 22.