| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9e0afe7382dbbde66d036c9c20f3ad34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_62a022b438611a1149c2fef2b5b5c232
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5f991461240335b3f7363e9be9f97052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e55f0fe51c9c1566d18730f0c4f5b1a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aa474eb9adaca26c96bfd8fdaa9f53b9 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-476 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 |
| filingDate |
2011-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b281d5dd743a15af9f11d78c50e829a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_254f2face8aff2e133c8151ce305f221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_156707f95c81bded27c5b6820b93a80b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fad7fc36a663768d5248fb6f840cce98 |
| publicationDate |
2013-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2013017170-A1 |
| titleOfInvention |
Low voltage organic transistor |
| abstract |
The present invention is relative to an organic transistor (1) comprising a gate electrode (5), a source (6) and a drain (7) electrodes, an organic semiconductor (9), and an insulating layer (2) realized between the organic semiconductor (9) and the gate (5). The insulating layer includes a metal oxide layer (3) having a first thickness (T 1 ) comprised between 0 nm < T 1 < 20 nm and having a first relative permittivity (ε 1 ), and a dielectric polymer layer (4) having a second thickness (T 2 ) comprised between 0 nm < T 2 < 50 nm, said dielectric polymer layer (4) having a second relative permittivity (ε 2 ) and forming an interface with said organic semiconductor (9), wherein said first and second relative permittivity satisfy the following equation: Ιε 1 — ε 2 Ι \≤ 10. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/IT-201700069353-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102013017228-B3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10116011-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102019200810-A1 |
| priorityDate |
2011-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |